PART |
Description |
Maker |
AS7C33256FT32_36A AS7C33256FT32_36A.V1.1 AS7C33256 |
3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 8.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 36 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 7.5 ns, PQFP100 3.3V 256K x 32/36 Flow-through synchronous SRAM 256K X 32 STANDARD SRAM, 10 ns, PQFP100 DIODE ZENER SINGLE 1000mW 24Vz 10.5mA-Izt 0.05 5uA-Ir 18.2Vr DO41-GLASS 5K/AMMO From old datasheet system Sync SRAM - 3.3V
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Alliance Semiconductor, Corp. Alliance Semiconductor Corporation ALSC
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DS3045W-100 DS3045W |
3.3V Single-Piece 1Mb Nonvolatile SRAM with Clock
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MAXIM[Maxim Integrated Products]
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DS3050W-100 |
3.3V Single-Piece 4Mb Nonvolatile SRAM with Clock
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MAXIM - Dallas Semiconductor
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DS2045W |
DS2045W 3.3V Single-Piece 1Mb Nonvolatile SRAM
|
Maxim
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DS2065W |
3.3V Single-Piece 8Mb Nonvolatile SRAM From old datasheet system
|
Maxim
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IDT71V3576YS133BG IDT71V3576YS133BGI IDT71V3578YS1 |
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PBGA165
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Integrated Device Technology, Inc. http:// Integrated Device Techn...
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27C2000 MX27C2000 MX27C2000MC-10 MX27C2000MC-12 MX |
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 55 ns, PDSO32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 70 ns, PDIP32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 70 ns, PQCC32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 90 ns, PQCC32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 55 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 85 256K X 8 OTPROM, 90 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 85 256K X 8 OTPROM, 45 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.8V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 85 Single Output LDO, 3.0A, Fixed(3.3V), Fast Transient Response, Reverse Current Protection 5-DDPAK/TO-263 -40 to 85
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MACRONIX INTERNATIONAL CO LTD PROM Macronix International Co., Ltd. MCNIX[Macronix International]
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MBM29LV400T MBM29LV400B |
CMOS 4M (512K ×8/256K×16) Falsh Memory(512K ×8/256K×16V 电源电压闪速存储器) 的CMOS 4分(12k × 8/256K × 16Falsh存储器(12k × 8/256K × 16位单5V的电源电压闪速存储器
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Fujitsu Limited Fujitsu, Ltd.
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IDT71V802S133PFI IDT71V802S133BQI IDT71V67602S133P |
256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM2.5VI / O的脉冲计数器输出流水线,单周期取 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 4.2 ns, PQFP100 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256 × 36,为512k × 18 3.3同步SRAM.5VI / O的脉冲计数器输出流水线,单周期取 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect 256K X 36 CACHE SRAM, 3.8 ns, PQFP100
|
Integrated Device Technology, Inc.
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AT49BV-LV002 AT49BV002-90VI ATMELCORP.-AT49BV-LV00 |
2-Megabit (256K x 8) Single 2.7-volt Battery-VoltageFlash Memory 2兆位56K × 8)单2.7伏电池电压⑩闪存 x8 Flash EEPROM 2-Megabit (256K x 8) Single 2.7-volt Battery-Voltage Flash Memory
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Atmel, Corp. Atmel Corp. ATMEL Corporation
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IDT71V3577S75PFG IDT71V3577SA80PFGI IDT71V3577SA85 |
3.3V 128K x 36 Synchronous Flow-Through SRAM w/3.3V I/O 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3VI / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 7.5 ns, PQFP100 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.3V的I / O的流量,通过输出脉冲计数器,单周期取 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 8 ns, PBGA165
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IDT Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
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